Rockwell ESM750 NPN Transistor 150W 900V 12A TO3

Manufactured by Rockwell - ESM750 - TO-3 through hole package

Type Designator: ESM750
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 4
Noise Figure, dB:
Package: TO3